Paul Richman was Chairman and Chief Executive Officer of Standard Microsystems Corporation. He retired in 2000. Having written numerous articles in technical journals around the world, he was also the author of two seminal textbooks relating to "microchips", Characteristics and Operation of MOS Field-Effect Devices, published by McGraw-Hill in 1967, and MOS Field-Effect Transistors and Integrated Circuits, published by John Wiley & Sons in 1974. His books have been translated into Japanese, Spanish, Chinese and Russian.
Mr. Richman was one of the founders of Standard Microsystems and, during twenty-nine years with the company, served as its Vice President of Research & Development, President, Chief Executive Officer and Chairman of the Board. He was also an Adjunct Professor of Electrical Engineering at the City University of New York, and a Visiting Professor in the Department of Electrical Sciences at the State University of New York at Stony Brook. A recognized authority in the field of semiconductor devices, Mr. Richman was responsible for the development of, and held the basic patent for, COPLAMOS technology, which pioneered the use of field-doped, locally-oxidized structures in MOS integrated circuits. Semiconductor manufacturers worldwide have used his inventions in high-speed, high-density MOS integrated circuits and, in particular, DRAMs and microprocessors. Among other important technical contributions to the field of microelectronics, he was also responsible for a considerable amount of the early work that led to the understanding and control of parasitic field-aided space-charge-limited current in high-density MOS integrated circuits. Mr. Richman's biography appears in current editions of Who's Who in America, Who's Who in the World, Who's Who in Science and Technology, and Who's Who in Finance and Industry.
In October 1978, Mr. Richman was named the winner of Electronics magazine's annual Award for Achievement for "major innovations in device fabrication techniques that greatly increase the performance of metal-oxide-semiconductor integrated circuits". He also received an award for "outstanding technical accomplishment" from the Institute of Electrical and Electronics Engineers (IEEE) in April 1980, for "the development of the COPLAMOS structure, which has made possible the fabrication of high-speed, high-density n-channel MOS structures for use in integrated circuits". In March 1982, in recognition for his many contributions to the field of electronics, Mr. Richman was elected a Fellow of the IEEE. In September 1988, on the occasion of the thirtieth anniversary of the invention of the integrated circuit, the editors of Electronic Engineering Times, VLSI Systems Design and Electronic Buyers' News collectively selected Mr. Richman as one of the thirty people in the world most responsible for the development of integrated circuit technology over the past thirty years. In 1998, he was the recipient of the IEEE's HAROLD A. WHEELER Award. In the year 2000, as part of its celebrating the coming of the new millennium, Mr. Richman was awarded the IEEE's THIRD MILLENNIUM medal.